The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
May. 10, 2016
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Shinichiro Matsunaga, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
An edge termination structure that surrounds an active region is disposed outside the active region. In the active region, a MOS gate structure is disposed. Inside an n-type drift layer, an n-type CS region that becomes a minority carrier barrier is disposed in a surface layer on a p-type base layer side. The n-type CS region is disposed in the active region and is not disposed in the edge termination structure. Thus, the impurity concentration of the n-type drift layer inside the edge termination structure is low enough to enable high breakdown voltage to be realized. In the n-type drift layer, which has a low impurity concentration, a JTE structure that is formed from first and second JTE regions is disposed.