The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Mar. 09, 2016
Applicant:

AU Optronics Corporation, Hsin-chu, TW;

Inventors:

Chen-Shuo Huang, Hsin-chu, TW;

Chih-Pang Chang, Hsin-chu, TW;

Hung-Wei Li, Hsin-chu, TW;

Assignee:

AU OPTRONICS CORPORATION, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3248 (2013.01); H01L 27/1225 (2013.01);
Abstract

A pixel structure includes a metal oxide semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, a passivation layer, a second conductive layer and a pixel electrode. The metal oxide semiconductor layer includes a second semiconductor pattern. The first insulating layer includes a first capacitance dielectric pattern disposed on the second semiconductor pattern. The second insulating layer includes a second capacitance dielectric pattern disposed on the first capacitance dielectric pattern. The first conductive layer includes a electrode pattern disposed on the second capacitance dielectric pattern. The passivation layer covers the first conductive layer. The second conductive layer includes a second electrode disposed on the passivation layer. The second electrode is electrically connected to the second semiconductor pattern. The second electrode is disposed to overlap the electrode pattern. The second semiconductor pattern, the electrode pattern and the second electrode form a storage capacitor.


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