The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Jul. 08, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Atsushi Fukumoto, Mie, JP;

Fumiki Aiso, Kuwana, JP;

Hajime Nagano, Yokkaichi, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/792 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01); H01L 23/522 (2006.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/11568 (2017.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1052 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01);
Abstract

According to an embodiment, a semiconductor memory device includes first and second stacked bodies, first and second memory parts, and an insulating part. The first stacked body includes first conductive layers and first insulating layers alternately arranged in a first direction. The second stacked body includes second conductive layers and second insulating layers alternately arranged in the first direction. The first and second memory parts extend through the first and second stacked body in the first direction, respectively. The insulating part is provided between the first and second stacked bodies. The insulating part includes a first oxygen-containing film including silicon and oxygen, and a nitrogen-containing film including silicon and nitrogen. The first oxygen-containing film is provided between at least one of first conductive layers and the nitrogen-containing film. The first oxygen-containing film has a hole.


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