The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Dec. 07, 2015
Sang-woo Pae, Seongnam-si, KR;
Jong-wook Jeon, Suwon-si, KR;
Seung-jin Choo, Suwon-si, KR;
Hyun-chul Sagong, Hwaseong-si, KR;
Jae-hee Choi, Seoul, KR;
Sang-Woo Pae, Seongnam-si, KR;
Jong-Wook Jeon, Suwon-si, KR;
Seung-Jin Choo, Suwon-si, KR;
Hyun-Chul Sagong, Hwaseong-si, KR;
Jae-Hee Choi, Seoul, KR;
Abstract
A semiconductor device includes a first fin pattern, which includes a first lower pattern and a first upper pattern stacked sequentially on a substrate, the first upper pattern including a first part and second parts respectively disposed on both sides of the first part, a gate electrode, which is formed on the first part to intersect the first fin pattern, and source/drain regions, which are formed on the second parts, respectively. A dopant concentration of the first upper pattern is higher than a dopant concentration of the first lower pattern and a dopant concentration of the substrate, and the dopant concentration of the first lower pattern is different from the dopant concentration of the substrate.