The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Apr. 29, 2015
Infineon Technologies Ag, Neubiberg, DE;
Kurt Matoy, Villach, AT;
Hubert Maier, Villach, AT;
Christian Krenn, Klagenfurt-Viktring, AT;
Elfriede Kraxner Wellenzohn, Villach, AT;
Helmut Schoenherr, Villach, AT;
Juergen Steinbrenner, Noetsch, AT;
Markus Kahn, Rangersdorf, AT;
Silvana Fister, Poggersdorf, AT;
Christoph Brunner, Villach, AT;
Herbert Gietler, Villach, AT;
Uwe Hoeckele, Regensburg, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.