The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

May. 10, 2016
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Franz Heider, Villach, AT;

Bernhard Brunner, Feldkirchen, AT;

Clemens Ostermaier, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); G01B 11/02 (2006.01); G01B 11/30 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G01B 11/02 (2013.01); G01B 11/303 (2013.01); H01L 21/0254 (2013.01); H01L 29/0692 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract

In an embodiment, a method for evaluating a surface of a semiconductor substrate includes directing an incident light beam having multiple wavelengths at a position of a layer having a surface profile configured to form an optical diffraction grating, the layer including a Group III nitride, detecting a reflected beam, reflected from the position, and obtaining a spectrum of reflected intensity as a function of wavelength, the spectrum being representative of the surface profile of the position of the layer from which the beam is reflected, comparing the spectrum obtained from the detected beam with one or more reference spectra stored in memory, and estimating at least one parameter of the surface profile.


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