The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Nov. 24, 2015
Applicant:

Spts Technologies Limited, Newport, GB;

Inventors:

Stephen R Burgess, Gwent, GB;

Anthony Paul Wilby, Bristol, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/677 (2006.01); F24C 7/04 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67276 (2013.01); F24C 7/04 (2013.01); H01L 21/324 (2013.01); H01L 21/67017 (2013.01); H01L 21/6719 (2013.01); H01L 21/67109 (2013.01); H01L 21/67748 (2013.01);
Abstract

A method of degassing semiconductor substrates includes sequentially loading a plurality of semiconductor substrates into a degas apparatus, and degassing the semiconductor substrates in parallel, the degassing of each semiconductor substrate commencing at a different time related to the time at which the semiconductor substrate was loaded into the degas apparatus. The method further includes unloading a semiconductor substrate from the degas apparatus when the semiconductor substrate has been degassed, while semiconductor substrates which were loaded later in the sequence are still being degassed. The degassing of the semiconductor substrates is performed at pressure of less than 10Torr, and the degas apparatus is pumped continuously during the degassing of the semiconductor substrates.


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