The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Aug. 18, 2015
Applicant:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Inventors:
Woo Chul Kwak, Ansan-si, KR;
Seung Kyu Choi, Ansan-si, KR;
Jae Hoon Song, Ansan-si, KR;
Chae Hon Kim, Ansan-si, KR;
Jung Whan Jung, Ansan-si, KR;
Assignee:
SEOUL VIOSYS CO., LTD., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/20 (2006.01); C30B 29/40 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 25/20 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 29/2003 (2013.01);
Abstract
Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.