The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Aug. 28, 2014
Applicant:
Sharp Kabushiki Kaisha, Osaka, JP;
Inventor:
Kazuhide Tomiyasu, Osaka, JP;
Assignee:
SHARP KABUSHIKI KAISHA, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1339 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); G02F 1/13 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13394 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/133345 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); G02F 2001/1316 (2013.01); G02F 2001/13396 (2013.01); G02F 2001/13398 (2013.01); G02F 2001/134372 (2013.01); G02F 2202/02 (2013.01);
Abstract
According to an embodiment of the present invention, an active matrix substrate manufacturing method includes: a step (a) of forming a thin film transistor on a substrate; a step (b) of forming an interlayer insulating layer covering the thin film transistor; a step (c) of forming a first electrode after the step (b); a step (d) of forming, after the step (c), a photospacer by applying a photosensitive resin material to the substrate and patterning the photosensitive resin material; and a step (e) of performing, after the step (d), plasma processing using a gas that contains a fluorine-based gas but does not contain oxygen gas.