The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2017

Filed:

Jun. 18, 2013
Applicants:

The University of Tokyo, Bunkyo-ku, Tokyo, JP;

Kabushiki Kaisha Saginomiya Seisakusho, Nakano-ku, Tokyo, JP;

Inventors:

Hiroyuki Fujita, Tokyo, JP;

Hiroshi Toshiyoshi, Tokyo, JP;

Hiroyuki Mitsuya, Sayama, JP;

Assignees:

THE UNIVERSITY OF TOKYO, Bunkyo-Ku, Tokyo, JP;

KABUSHIKI KAISHA SAGINOMIYA SEISAKUSHO, Nakano-Ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01); H01L 29/84 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0073 (2013.01); B81C 1/00047 (2013.01); B81C 1/00293 (2013.01); G01L 9/0042 (2013.01); H01L 29/84 (2013.01); B81B 2201/0264 (2013.01);
Abstract

A device member including a cavity, includes a base member, an interlayer, an upper layer, an opening portion, and a gas-permeable sealing layer. The base member includes a first semiconductor. The interlayer is formed on the base member and is non-conductive. The upper layer is formed on the interlayer and includes a second semiconductor. The opening portion is formed at the upper layer. The gas-permeable sealing layer is formed to seal the opening portion formed at the upper layer. The cavity is formed by removing the interlayer with an etching gas that penetrates through the sealing layer.


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