The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Mar. 16, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 23/49 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); H04R 19/00 (2006.01); H04R 1/28 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0064 (2013.01); B81C 1/00301 (2013.01); H04R 1/28 (2013.01); H04R 19/005 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/012 (2013.01); B81B 2207/094 (2013.01); B81B 2207/095 (2013.01); H04R 2201/003 (2013.01);
Abstract
A semiconductor device includes a microelectromechanical system (MEMS) die, an encapsulation material, a via element, a non-conductive lid, and a conductive layer. The encapsulation material laterally surrounds the MEMS die. The via element extends through the encapsulation material. The non-conductive lid is over the MEMS die and defines a cavity. The conductive layer is over the MEMS die and the encapsulation material and is electrically coupled to the via element.