The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Jan. 06, 2016
Applicant:
Robert Bosch Gmbh, Stuttgart, DE;
Inventors:
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H01L 21/50 (2006.01); B81C 1/00 (2006.01); B81B 3/00 (2006.01); B81B 7/00 (2006.01); H01L 29/772 (2006.01); H01L 21/02 (2006.01); H01L 21/58 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0021 (2013.01); B81C 1/00134 (2013.01); B81C 1/00246 (2013.01); B81B 2201/0221 (2013.01); B81B 2201/0228 (2013.01); B81C 2203/0771 (2013.01);
Abstract
A method of fabricating a semiconductor device comprises forming a dielectric layer above a substrate, the dielectric layer including a fixed dielectric portion and a proof mass portion, forming a source region and a drain region in the substrate, forming a gate electrode in the proof mass portion, and releasing the proof mass portion, such that the proof mass portion is movable with respect to the fixed dielectric portion and the gate electrode is movable with the proof mass portion relative to the source region and the drain region.