The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Jun. 26, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Takashi Moriyama, Yokohama, JP;

Kiyofumi Sakaguchi, Miura-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/335 (2013.01); H01L 27/1463 (2013.01); H01L 27/14618 (2013.01); H01L 27/14643 (2013.01);
Abstract

A solid-state image sensor is provided. The solid-state image sensor includes a substrate. The substrate includes an electrode layer, an insulating layer arranged on the electrode layer, and a semiconductor layer arranged on the insulating layer. The semiconductor layer includes a first semiconductor region of a first conductivity type, a second semiconductor region configured to accumulate charges generated by photoelectric conversion, the second semiconductor region being arranged on the first semiconductor region and having a second conductivity type opposite to the first conductivity type, and a third semiconductor region of the second conductivity type to which the charges accumulated in the second semiconductor region are transferred.


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