The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Jan. 28, 2016
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Mladen Ivankovic, Oakville, CA;

Fred Sawyer, Foxboro, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/60 (2006.01); H03K 17/567 (2006.01); H03K 17/74 (2006.01); H03K 17/691 (2006.01); H03K 7/08 (2006.01); H03K 17/22 (2006.01);
U.S. Cl.
CPC ...
H03K 17/567 (2013.01); H03K 7/08 (2013.01); H03K 17/223 (2013.01); H03K 17/691 (2013.01); H03K 17/74 (2013.01); H03K 2017/226 (2013.01);
Abstract

In accordance with an embodiment, a circuit includes a first and a second switching transistors configured to be coupled in series between a first reference voltage terminal and a transformer. The circuit also includes a first diode coupled between a first drain of the first switching transistor and a first input terminal. The first diode is configured to clamp a voltage of the first drain to a voltage of the first input terminal. The circuit further includes a switching circuit coupled between the second switching transistor and the first input terminal. The switching circuit is configured to connect a second source of the second switching transistor to a second gate of the second switching transistor when a voltage of the second source exceeds the voltage of the first input terminal.


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