The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Apr. 21, 2014
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Marco Berkhout, Nijmegen, NL;
Paulus Petrus Franciscus Maria Bruin, Nijmegen, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/082 (2006.01); H03K 17/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); H03K 17/00 (2013.01);
Abstract
In High Voltage CMOS technologies the supply voltage is typically higher than the maximum allowed gate voltage. In a switching output stage of amplifiers such class-D amplifiers and DC-DC converters the gates of the power field effect transistors need to be charged quickly. This requires a gate driver that is capable of delivering large currents without exceeding the maximum allowed voltage on the gate of the power field effect transistors.