The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Apr. 20, 2016
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Meng-Fan Chang, Taichung, TW;

Albert Lee, Hsinchu, TW;

Chieh-Pu Lo, Hsinchu, TW;

Chien-Chen Lin, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); H03K 3/356 (2006.01); H03K 3/037 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H03K 3/356008 (2013.01); G11C 13/0069 (2013.01); H03K 3/0375 (2013.01);
Abstract

Provided is a non-volatile latch, which includes a latch circuit, a first switch circuit, a non-volatile memory device, a second switch circuit and a third switch circuit. A first terminal of the first switch circuit is coupled to a first output terminal of the latch circuit. The first switch circuit is turned off in a normal operation period. A first terminal of the non-volatile memory device is coupled to a second terminal of the first switch circuit. A second terminal of the non-volatile memory device is coupled to a programming voltage via the second switch circuit. In a store period, according to latched data of the latch circuit and a state transformation condition of the non-volatile memory device, the third switch circuit can dynamically determine whether to couple the first terminal of the non-volatile memory device to a reference voltage.


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