The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Apr. 27, 2016
Applicant:

Soongsil University Research Consortium Techno-park, Seoul, KR;

Inventors:

Mi Lim Lee, Gyeonggi-do, KR;

Chang Kun Park, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03F 1/56 (2006.01); H03F 3/195 (2006.01); H01L 23/66 (2006.01); H01L 25/065 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45269 (2013.01); H01L 23/5384 (2013.01); H01L 23/66 (2013.01); H01L 25/0657 (2013.01); H03F 1/565 (2013.01); H03F 3/195 (2013.01); H01L 2223/6638 (2013.01); H03F 2200/451 (2013.01); H03F 2200/534 (2013.01); H03F 2200/541 (2013.01);
Abstract

The present invention relates to a high frequency transformer for a differential amplifier. An exemplary embodiment of the present invention provides a high frequency transformer for a differential amplifier, including: a first metal line that is integrated and formed in an IC chip through a CMOS process and that is connected to a differential signal line of a transistor included in the IC chip; and a second metal line that is formed in an MEMS chip through an MEMS process and that is inductively coupled with the first metal line in a state spaced apart from an upper portion of the first metal line, wherein the MEMS chip may be stacked on an upper portion of the IC chip.


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