The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Feb. 04, 2016
Applicant:

Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;

Inventors:

Masaya Murata, Chiba, JP;

Makoto Mitani, Chiba, JP;

Kotaro Watanabe, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 5/32 (2006.01); H03B 5/36 (2006.01); H03L 5/00 (2006.01); H03L 1/02 (2006.01); H03L 7/08 (2006.01);
U.S. Cl.
CPC ...
H03B 5/364 (2013.01); H03L 1/02 (2013.01); H03L 5/00 (2013.01); H03L 7/0802 (2013.01); H03B 2200/0082 (2013.01);
Abstract

Provided are a constant voltage circuit configured to, when a power supply voltage is low, detect a leakage current to output a stable voltage at a power supply voltage level, and a crystal oscillation circuit using the constant voltage circuit. The constant voltage circuit includes a leakage current detection circuit including a PMOS transistor for monitoring a leakage current, which has a gate and a source being grounded. When a leakage current is detected, even with a constant voltage power supply, a voltage sufficient for turning on an output transistor of the constant voltage circuit can be applied to a gate of the output transistor.


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