The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Nov. 19, 2012
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Christian Lauer, Regensburg, DE;

Harald König, Bernhardswald, DE;

Uwe Strauβ, Bad Abbach, DE;

Alexander Bachmann, München, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/024 (2006.01); H01S 5/10 (2006.01); H01S 5/022 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02469 (2013.01); H01S 5/024 (2013.01); H01S 5/10 (2013.01); H01S 5/1064 (2013.01); H01S 5/0224 (2013.01); H01S 5/02461 (2013.01); H01S 5/0425 (2013.01); H01S 5/2036 (2013.01); H01S 5/2054 (2013.01);
Abstract

A semiconductor laser diode is provided. A semiconductor layer sequence has semiconductor layers applied vertically one above the other. An active layer includes an active region having a width of greater than or equal to 30 μm emitting laser radiation during operation via a radiation coupling-out surface. The radiation coupling-out surface is formed by a lateral surface of the semiconductor layer sequence and forms, with an opposite rear surface, a resonator having lateral gain-guiding in a longitudinal direction. The semiconductor layer sequence is heated in a thermal region of influence by reason of the operation. A metallization layer is in direct contact with a top side of the semiconductor layer sequence.


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