The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

May. 05, 2014
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Robert Walter Berry, Jr., Round Rock, TX (US);

Ryan Joseph Pennington, Austin, TX (US);

Joab Daniel Henderson, Pflugerville, TX (US);

Divya Kumar, Austin, TX (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/07 (2006.01); H01R 12/70 (2011.01); G06F 11/20 (2006.01); G06F 13/16 (2006.01); G06F 13/40 (2006.01);
U.S. Cl.
CPC ...
H01R 12/7076 (2013.01); G06F 11/07 (2013.01); G06F 11/2094 (2013.01); G06F 13/1668 (2013.01); G06F 13/409 (2013.01);
Abstract

An enhanced dual in line memory module (DIMM) connector includes internal conductive paths that provide access to signaling on standard conductive paths to an industry standard DIMM. The internal conductive paths are coupled in series or in parallel with the standard conductive paths through the connector. Interposer circuitry, such as control circuitry and or supplemental memory circuitry, may be incorporated on or within the connector. The interposer circuitry may include field effect transistor (FET) switching circuitry configured to selectively decouple a defective dynamic random memory (DRAM) on a DIMM from a conductive path to a memory controller and couple a substitute DRAM to the conductive paths in its place.


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