The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Nov. 10, 2015
Applicant:

Symetrix Memory, Llc, Colorado Springs, CO (US);

Inventors:

Carlos A. Paz de Araujo, Colorado Springs, CO (US);

Jolanta Celinska, Colorado Springs, CO (US);

Christopher R. McWilliams, Colorado Springs, CO (US);

Assignee:

Symetrix Memory, LLC, Colorado Springs, CO (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/147 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01);
Abstract

A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxide and a dopant comprising a ligand, the dopant having a first concentration; a first buffer region between the first electrode and the resistive switching material, the first buffer region comprising the transition metal oxide and the dopant, wherein the dopant has a second concentration that is greater than the first concentration. In one embodiment, the second concentration is twice the first concentration. In one embodiment, the first buffer region is thicker than the active resistive switching region.


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