The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Jun. 11, 2015
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Gabriel Molas, Grenoble, FR;

Philippe Blaise, Grenoble, FR;

Faiz Dahmani, La Varenne Saint-Hilaire, FR;

Elisa Vianello, Grenoble, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); G11C 13/0011 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01);
Abstract

A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material; a solid electrolyte including a region made of an oxide of a first metal element, referred to as first metal oxide doped by a second element, distinct from the first metal and able to form a second oxide, the second element being selected such that the band gap energy of the second oxide is strictly greater than the band gap energy of the first metal oxide, the atomic percentage of the second element within the region of the solid electrolyte being comprised between 5% and 20%.


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