The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Oct. 02, 2015
Applicants:

University of Houston System, Houston, TX (US);

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Qing Jie, Houston, TX (US);

Zhifeng Ren, Houston, TX (US);

Gang Chen, Cambridge, MA (US);

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 35/14 (2006.01); H01L 35/34 (2006.01); H01L 35/20 (2006.01); H01L 35/22 (2006.01); H01L 35/08 (2006.01);
U.S. Cl.
CPC ...
H01L 35/14 (2013.01); H01L 35/08 (2013.01); H01L 35/20 (2013.01); H01L 35/22 (2013.01); H01L 35/34 (2013.01);
Abstract

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSiand a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer 'second layer' disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm.


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