The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Aug. 21, 2013
Applicants:

Benjamin Daniel Mangum, Tualatin, OR (US);

Weiwen Zhao, Happy Valley, OR (US);

Kari N. Haley, Portland, OR (US);

Juanita N. Kurtin, Hillsboro, OR (US);

Inventors:

Benjamin Daniel Mangum, Tualatin, OR (US);

Weiwen Zhao, Happy Valley, OR (US);

Kari N. Haley, Portland, OR (US);

Juanita N. Kurtin, Hillsboro, OR (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 33/14 (2006.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); H01L 33/501 (2013.01); H01L 33/508 (2013.01); H01L 33/56 (2013.01); B82Y 20/00 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0083 (2013.01); Y10S 977/774 (2013.01); Y10S 977/95 (2013.01);
Abstract

Networks of semiconductor structures with fused insulator coatings and methods of fabricating networks of semiconductor structures with fused insulator coatings are described. In an example, a semiconductor structure includes an insulator network. A plurality of discrete semiconductor nanocrystals is disposed in the insulator network. Each of the plurality of discrete semiconductor nanocrystals is spaced apart from one another by the insulator network.


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