The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Dec. 05, 2014
Applicant:
Agency for Defense Development, Daejeon, KR;
Inventors:
Chulkyun Seok, Seoul, KR;
Euijoon Yoon, Seoul, KR;
Yongjo Park, Yongin-si, KR;
Chiyeon Kim, Daejeon, KR;
Assignee:
AGENCY FOR DEFENSE DEVELOPMENT, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02366 (2013.01); H01L 27/1446 (2013.01); H01L 31/18 (2013.01);
Abstract
A photodetector with a plasmon structure includes a semiconductor substrate, a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate, and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon.