The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Oct. 05, 2012
Applicants:

Total Marketing Services, Puteaux, FR;

Katholieke Universiteit Leuven, K.u. Leuven R&d, Leuven, BE;

Imec, Leuven, BE;

Inventors:

Perine Jaffrennou, Brussels, BE;

Johan Das, Nieuwrode, BE;

Angel Uruena De Castro, Heverlee, BE;

Assignees:

IMEC, Leuven, BE;

Total Marketing Services, Puteaux, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/061 (2012.01); H01L 31/18 (2006.01); B23K 26/362 (2014.01); B23K 26/40 (2014.01); B23K 103/16 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); B23K 26/362 (2013.01); B23K 26/40 (2013.01); H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); H01L 31/061 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); B23K 2203/172 (2015.10); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

The invention relates to the manufacturing process of a solar cell () with back contact and passivated emitter, comprising a dielectric stack () of at least two layers consisting of at least a first dielectric layer () made of AlOx in contact with a p-type silicon layer (), and a second dielectric layer () deposited on the first dielectric layer (). Besides, the method of manufacturing comprising a formation step of at least one partial opening () preferably by laser ablation into the dielectric stack (), sparing at least partially the aforementioned first dielectric layer.


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