The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Mar. 23, 2015
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/167 (2006.01); H01L 21/02 (2006.01); H01L 29/73 (2006.01); H01L 29/739 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78684 (2013.01); H01L 21/02425 (2013.01); H01L 21/02433 (2013.01); H01L 21/02527 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02664 (2013.01); H01L 21/043 (2013.01); H01L 29/1606 (2013.01); H01L 29/167 (2013.01); H01L 29/7311 (2013.01); H01L 29/7391 (2013.01); H01L 29/78696 (2013.01); H01L 29/778 (2013.01);
Abstract
A transistor includes a channel layer in which a plurality of graphene whose edge portions are terminated with modifying groups different from each other are bonded to each other; a gate electrode formed on the channel layer via a gate insulating film; and a source electrode and a drain electrode formed on the channel layer.