The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Sep. 16, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Xianyu Wenxu, Suwon-si, KR;
Yongsung Kim, Namyangju-si, KR;
Changyoul Moon, Suwon-si, KR;
Yongyoung Park, Daejeon, KR;
Wooyoung Yang, Hwaseong-si, KR;
Jeongyub Lee, Seoul, KR;
Jooho Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.