The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Jun. 29, 2016
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Peter J. Zampardi, Jr., Newbury Park, CA (US);
Kai Hay Kwok, Thousand Oaks, CA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/737 (2006.01); H01L 29/73 (2006.01); H01L 31/0328 (2006.01); H01L 29/36 (2006.01); H01L 29/08 (2006.01); H01L 29/732 (2006.01); H01L 23/66 (2006.01); H01L 29/165 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H03F 3/195 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7378 (2013.01); H01L 23/66 (2013.01); H01L 29/0821 (2013.01); H01L 29/0826 (2013.01); H01L 29/165 (2013.01); H01L 29/205 (2013.01); H01L 29/36 (2013.01); H01L 29/365 (2013.01); H01L 29/66242 (2013.01); H01L 29/73 (2013.01); H01L 29/737 (2013.01); H01L 29/7325 (2013.01); H01L 29/7371 (2013.01); H01L 2223/665 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6677 (2013.01); H01L 2223/6683 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H03F 2200/451 (2013.01);
Abstract
This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.