The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
May. 05, 2016
Ams Ag, Unterpremstaetten, AT;
Martin Knaipp, Unterpremstaetten, AT;
AMS AG, Unterpremstaetten, AT;
Abstract
The high-voltage transistor device comprises a semiconductor substrate () with a source region () of a first type of electrical conductivity, a body region () including a channel region () of a second type of electrical conductivity opposite to the first type of conductivity, a drift region () of the first type of conductivity, and a drain region () of the first type of conductivity extending longitudinally in striplike fashion from the channel region () to the drain region () and laterally confined by isolation regions (). The drift region () comprises a doping of the first type of conductivity and includes an additional region () with a net doping of the second type of conductivity to adjust the electrical properties of the drift region (). The drift region depth and the additional region depth do not exceed the maximal depth () of the isolation regions ().