The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Sep. 28, 2015
Applicant:
Abb Schweiz Ag, Baden, CH;
Inventors:
Munaf Rahimo, Uezwil, CH;
Maxi Andenna, Dättwil, CH;
Assignee:
ABB Schweiz AG, Baden, CH;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/36 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66325 (2013.01); H01L 29/0834 (2013.01); H01L 29/36 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01);
Abstract
Method for manufacturing an insulated gate bipolar transistor, which includes a drift layer of a first conductivity type between an emitter side, at which a gate and emitter electrode are arranged, and a collector side, at which a collector electrode is arranged including steps: