The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Dec. 31, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Stephen W. Bedell, Wappingers Falls, NY (US);

Keith E. Fogel, Hopewell Junction, NY (US);

Paul A. Lauro, Brewster, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/86 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/683 (2006.01); H01L 21/3065 (2006.01); H01L 29/20 (2006.01); H01L 29/868 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66204 (2013.01); H01L 21/0254 (2013.01); H01L 21/3065 (2013.01); H01L 21/6835 (2013.01); H01L 29/2003 (2013.01); H01L 29/66121 (2013.01); H01L 29/868 (2013.01);
Abstract

According to an embodiment of the present invention, a method for fabricating a semiconductor device comprises depositing a transition layer on a substrate, depositing GaN material on the transition layer, forming a contact on the GaN material, depositing a stressor layer on the GaN material, separating the transition layer and the substrate from the GaN material, patterning and removing portions of the GaN material to expose portions of the stressor layer.


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