The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Sep. 02, 2016
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Priyatharshan Pathmanathan, Wake Forest, NC (US);

Devarshi Patel, Cary, NC (US);

Dennis Allen Northgrave, Fuquay Varina, NC (US);

Kyle Roberts, Raleigh, NC (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/24 (2006.01); H01L 49/02 (2006.01); H01L 23/498 (2006.01); H01L 27/108 (2006.01); G11C 11/401 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); G11C 11/401 (2013.01); H01L 23/49811 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 27/108 (2013.01);
Abstract

An electrical device including a structure having a plurality of dielectric layers, the structure further having a plurality of vertical electrical connections extending from a top layer of the dielectric layers to a bottom layer of the dielectric layers, a first vertical electrical connection of the plurality of vertical electrical connections including a first capacitive structure that extends in a plane perpendicular to a vertical dimension of the vertical electrical connection, wherein the first capacitive structure is disposed on a first dielectric layer of the plurality of dielectric layers, wherein the first dielectric layer is below the top layer, and a second vertical electrical connection of the plurality of vertical electrical connections including a second capacitive structure extending in the plane and disposed on the first dielectric layer.


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