IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9721978 B1

PDFFull Text
Date of Patent:
Aug. 01, 2017

Filed:

Aug. 14, 2015

Thin film transistor device, manufacturing method thereof, and display apparatus

Applicants:

Boe Technology Group Co., Ltd, Beijing, CN;

Chongqing Boe Optoelectronics Technology Co., Ltd, Chongqing, CN;

Inventors:

Wu Wang, Beijing, CN;

Haijun Qiu, Beijing, CN;

Fei Shang, Beijing, CN;

Guolei Wang, Beijing, CN;

Assignees:

BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;

CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Chongqing, CN;

Attorney:

Anova Law Group, PLLC

Primary Examiner:

Thanhha Pham

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/441 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 21/027 (2006.01); H01L 21/4757 (2006.01); H01L 21/4763 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 21/0274 (2013.01); H01L 21/441 (2013.01); H01L 21/47573 (2013.01); H01L 21/47635 (2013.01); H01L 27/1225 (2013.01); H01L 29/41725 (2013.01); H01L 29/41733 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78615 (2013.01); H01L 29/78618 (2013.01);
Abstract

Various embodiments provide a thin film transistor (TFT) device, a manufacturing method of the TFT device, and a display apparatus including the TFT device. An etch stop layer (ESL) material is formed on an active layer on a substrate. An electrical conductive layer material is formed on the ESL material for forming a source electrode and a drain electrode. The electrical conductive layer material is patterned to form a first portion of the source electrode containing a first via-hole through the source electrode, and to form a first portion of the drain electrode containing a second via-hole through the drain electrode. The ESL material is patterned to form an etch stop layer (ESL) pattern including a first ESL via-hole connecting to the first via-hole through the source electrode and including a second ESL via-hole connecting to the second via-hole through the drain electrode.

Find Patent Forward Citations

Loading…