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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9721945 B1

PDFFull Text
Date of Patent:
Aug. 01, 2017

Filed:

Dec. 16, 2014

Semiconductor device with igbt and diode

Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Weitao Cheng, Kariya, JP;

Shigeki Takahashi, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Benjamin Sandvik

Assistant Examiner:

Damon Hillman

Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 21/22 (2006.01); H01L 27/07 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0716 (2013.01); H01L 27/0727 (2013.01); H01L 29/0834 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/1087 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/861 (2013.01);
Abstract

A semiconductor device includes: an IGBT section including a vertical IGBT; and a diode section arranged along the IGBT section and including a diode. The diode section includes a hole injection reduction layer having a first conductivity type and arranged in an upper layer portion of a drift layer, extending to a depth deeper than an anode region constituted by a second conductivity type region in the diode section, having an impurity concentration lower than an impurity concentration of the anode region and higher than an impurity concentration of the drift layer.

Find Patent Forward Citations

Cheng, Weitao. (2017). Semiconductor device with igbt and diode (U.S. Patent No. 9721945). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9721945

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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