The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Dec. 16, 2014
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventors:
Weitao Cheng, Kariya, JP;
Shigeki Takahashi, Kariya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/36 (2006.01); H01L 21/22 (2006.01); H01L 27/07 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0716 (2013.01); H01L 27/0727 (2013.01); H01L 29/0834 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/1087 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/861 (2013.01);
Abstract
A semiconductor device includes: an IGBT section including a vertical IGBT; and a diode section arranged along the IGBT section and including a diode. The diode section includes a hole injection reduction layer having a first conductivity type and arranged in an upper layer portion of a drift layer, extending to a depth deeper than an anode region constituted by a second conductivity type region in the diode section, having an impurity concentration lower than an impurity concentration of the anode region and higher than an impurity concentration of the drift layer.