The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Feb. 16, 2015
Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Motoru Yoshida, Tokyo, JP;

Kazuyo Endo, Tokyo, JP;

Jun Fujita, Tokyo, JP;

Hiroaki Okabe, Tokyo, JP;

Kazuyuki Sugahara, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/872 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 23/36 (2006.01); H01L 23/373 (2006.01); H01L 23/31 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 23/3135 (2013.01); H01L 23/3192 (2013.01); H01L 23/36 (2013.01); H01L 23/3735 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 29/1608 (2013.01); H01L 29/401 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01); H01L 23/564 (2013.01); H01L 24/06 (2013.01); H01L 24/33 (2013.01); H01L 29/47 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03914 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05085 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13582 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13624 (2013.01); H01L 2224/13639 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/13655 (2013.01); H01L 2224/33181 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device capable of inhibiting oxidation of a Cu wiring even in a high temperature operation. The semiconductor device includes a semiconductor substrate having a main surface, a Cu electrode which is selectively formed on a side of the main surface of the semiconductor substrate, an antioxidant film formed on an upper surface of the Cu electrode except an end portion thereof, an organic resin film which is formed on the main surface of the semiconductor substrate and covers a side surface of the Cu electrode and the end portion of the upper surface thereof, and a diffusion prevention film formed between the organic resin film and the main surface of the semiconductor substrate and between the organic resin film and the side surface and the end portion of the upper surface of the Cu electrode, being in contact therewith.


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