The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Nov. 18, 2015
Applicant:
Socionext Inc., Yokohama-shi, Kanagawa, JP;
Inventors:
Assignee:
SOCIONEXT INC., Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/42 (2006.01); H01L 25/18 (2006.01); H01L 21/56 (2006.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); H01L 21/563 (2013.01); H01L 23/367 (2013.01); H01L 23/3736 (2013.01); H01L 23/42 (2013.01); H01L 24/17 (2013.01); H01L 24/33 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/18 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 25/16 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05575 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/27334 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29109 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29155 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29191 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81075 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83075 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/83487 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/92225 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/1659 (2013.01); H01L 2924/16152 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/16747 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/19105 (2013.01);
Abstract
A method for manufacturing a semiconductor device is provided, the method including: mounting a first element on a wiring substrate, placing a first heat sink on the first element with a metal material interposed between the first heat sink and the first element, attaching the first heat sink to the first element via the metal material by heating and melting the metal material, and mounting a second element on the wiring substrate after the steps of attaching the first heat sink to the first element.