The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

May. 28, 2015
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Hiroaki Niimi, Cohoes, NY (US);

Brian K. Kirkpatrick, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 21/3213 (2006.01); H01L 21/477 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/82385 (2013.01); H01L 21/28008 (2013.01); H01L 21/28088 (2013.01); H01L 21/324 (2013.01); H01L 21/32131 (2013.01); H01L 21/32133 (2013.01); H01L 21/477 (2013.01); H01L 21/823842 (2013.01); H01L 21/32134 (2013.01); H01L 21/823857 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract

An integrated circuit with a thick TiN metal gate with a work function greater than 4.85 eV and with a thin TiN metal gate with a work function less than 4.25 eV. An integrated circuit with a replacement gate PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a replacement gate NMOS TiN metal gate transistor with a workfunction less than 4.25 eV. An integrated circuit with a gate first PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a gate first NMOS TiN metal gate transistor with a workfunction less than 4.25 eV.


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