The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
May. 06, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Seok-Han Park, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/0223 (2013.01); H01L 21/02142 (2013.01); H01L 21/02164 (2013.01); H01L 21/02318 (2013.01); H01L 21/31051 (2013.01); H01L 27/10814 (2013.01); H01L 27/10817 (2013.01); H01L 27/10823 (2013.01); H01L 27/10847 (2013.01); H01L 27/10897 (2013.01); H01L 29/0642 (2013.01);
Abstract
A method of manufacturing a semiconductor device comprising the steps of: forming a trench at an upper portion of a semiconductor substrate forming a preliminary filling insulation layer by coating a siloxane composition on the semiconductor substrate to fill the trench performing a low temperature curing process at a temperature in a range from about 50° C. to about 150° C. such that the preliminary filling insulation layer is transformed into a filling insulation layer including polysiloxane and forming an isolation layer by planarizing the filling insulation layer.