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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9721798 B1

PDFFull Text
Date of Patent:
Aug. 01, 2017

Filed:

Sep. 15, 2014

Method and apparatus for depositing amorphous silicon film

Applicant:

Eugene Technology Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Seung-Woo Shin, Hwaseong-si, KR;

Hai-Won Kim, Icheon-si, KR;

Woo-Duck Jung, Suwon-si, KR;

Sung-Kil Cho, Yongin-si, KR;

Wan-Suk Oh, Icheon-si, KR;

Ho-Min Choi, Yongin-si, KR;

Koon-Woo Lee, Yongin-si, KR;

Assignee:

EUGENE TECHNOLOGY CO., LTD., Yongin-si, Gyeonggi-do, KR;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Marvin Payen

Assistant Examiner:

Jeremy Joy

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/18 (2006.01); C23C 16/24 (2006.01); H01L 21/285 (2006.01); H01L 31/20 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28556 (2013.01); C23C 16/24 (2013.01); C23C 16/4405 (2013.01); C23C 16/45563 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/28525 (2013.01); H01L 21/32055 (2013.01); H01L 21/76877 (2013.01); H01L 31/202 (2013.01);
Abstract

Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH), disilane (SiH), and dichlorosilane (SiClH).

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