The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Feb. 11, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Young Ho Yang, Chungcheongbuk-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 27/11521 (2017.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 27/11521 (2013.01); H01L 29/42324 (2013.01); H01L 29/7889 (2013.01); H01L 21/02074 (2013.01); H01L 21/311 (2013.01); H01L 21/76832 (2013.01); H01L 23/53295 (2013.01); H01L 27/11556 (2013.01);
Abstract
A semiconductor device and a method for forming the same. The semiconductor device includes a tunnel insulating layer, a charge storage layer including a dopant, and a diffusion barrier layer including at least one of carbon, nitrogen, or oxygen interposed between the tunnel insulating layer and the charge storage layer.