The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Jan. 26, 2015
Applicants:

Sang-wan Nam, Hwaseong-si, KR;

Kyung-min Kang, Suwon-si, KR;

Inventors:

Sang-wan Nam, Hwaseong-si, KR;

Kyung-min Kang, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 7/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 7/14 (2013.01); G11C 16/0483 (2013.01);
Abstract

A method of operating a memory device including a first memory block having a plurality cell strings is provided. Each of the plurality of cell strings includes a string selection transistor connected in series to a first dummy cell, a plurality of normal cells, a second dummy cell and a ground selection transistor. The method includes programming the first dummy cell, and programming the normal cells in at least one of the cell strings after the programming the first dummy cell. The normal cells are selected based on a first program command inputted to the memory device. The programming the first dummy cell is performed at least twice before the normal cells are programmed. A number of times of programming the first dummy cell is different according to a level of a voltage applied to the first dummy cell and a level of a voltage applied to the normal cells.


Find Patent Forward Citations

Loading…