The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Sep. 16, 2016
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Ryuji Ohba, Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0007 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 45/08 (2013.01); H01L 45/1246 (2013.01); H01L 45/146 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0078 (2013.01); G11C 2213/11 (2013.01); G11C 2213/32 (2013.01); G11C 2213/54 (2013.01);
Abstract

A memory device according to one embodiment includes a first interconnection, a second interconnection, a charge storage portion provided between the first interconnection and the second interconnection, a tunnel film provided between the first interconnection and the charge storage portion, and a block film. the charge storage portion is capable of accumulating an electron. The tunnel film includes a fine particulate layer that including conductive fine particulates satisfying the Coulomb blockade condition, a first tunnel insulating layer provided between the first interconnection and the fine particulate layer, and a second tunnel insulating layer provided between the fine particulate layer and the charge storage portion. The block film is provided between the charge storage portion and the second interconnection. The block film has an energy structure in which no concave portion with an energy barrier lower than energy barriers on both sides thereof is present.


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