The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Jun. 04, 2015
Applicant:

Arm Limited, Cambridge, GB;

Inventors:

James Edward Myers, Cambridge, GB;

David Walter Flynn, Cambridge, GB;

David William Howard, Cambridge, GB;

Assignee:

ARM Limited, Cambridge, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0175 (2006.01); G05F 3/08 (2006.01); G06F 17/50 (2006.01); G06F 1/32 (2006.01); H03K 19/00 (2006.01);
U.S. Cl.
CPC ...
G05F 3/08 (2013.01); G06F 1/3287 (2013.01); G06F 17/5068 (2013.01); H03K 19/0016 (2013.01);
Abstract

An electronic devicehas circuitrywhich operates in a first voltage domainsupplied with a first voltage level VDDand a reference voltage level. A voltage regulatorgenerates the first voltage level VDDfrom a second voltage level VDDhigher than the first voltage level VDD. At least one power gateis provided for selectively coupling the circuitryto one of the first voltage level VDDor the reference level. The control signalfor the power gateis generated in a second voltage domain supplied with a higher voltage level VDDor VDDderived from the second voltage level VDDsupplied to the voltage regulator. Hence, an existing high voltage source within the devicecan be reused for applying a boosted voltage to power gates to improve efficiency of power gating.


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