The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Sep. 09, 2014
Applicant:

Hoya Corporation, Tokyo, JP;

Inventor:

Takahiro Onoue, Tokyo, JP;

Assignee:

HOYA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/48 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/48 (2013.01); G03F 7/2004 (2013.01);
Abstract

A substrate with a multilayer reflective film that yields a reflective mask achieving high reflectance and exhibiting excellent cleaning resistance. The present invention is directed to a substrate with a multilayer reflective film, which has: a substrate; a multilayer reflective film, formed on a substrate, having a layer comprising Si as a high refractive-index material and a layer comprising a low refractive-index material, wherein the layers are periodically laminate; and a Ru protective film, formed on the multilayer reflective film, for protecting the multilayer reflective film, wherein the surface layer of the multilayer reflective film on the other side of the substrate is the layer comprising Si, and wherein the Ru protective film comprises a Ru compound comprising Ru and Ti, wherein the Ru compound contains Ru in an amount greater than that in the stoichiometric composition of RuTi.


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Onoue, Takahiro. (2017). Substrate with a multilayer reflective film, reflective mask blank for euv lithography, reflective mask for euv lithography and method of manufacturing the same, and method of manufacturing a semiconductor device (U.S. Patent No. 9720317). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9720317

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