The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2017

Filed:

Dec. 13, 2012
Applicant:

Element Six Technologies Limited, London, GB;

Inventors:

Paul Nicholas Inglis, Berkshire, GB;

John Robert Brandon, Oxfordshire, GB;

Joseph Michael Dodson, Berkshire, GB;

Timothy Peter Mollart, Oxfordshire, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 1/02 (2006.01); C23C 16/01 (2006.01); C23C 16/27 (2006.01); C23C 16/458 (2006.01); C23C 16/56 (2006.01); C23C 16/46 (2006.01); C01B 31/06 (2006.01);
U.S. Cl.
CPC ...
G02B 1/02 (2013.01); C01B 31/06 (2013.01); C23C 16/01 (2013.01); C23C 16/274 (2013.01); C23C 16/4586 (2013.01); C23C 16/463 (2013.01); C23C 16/56 (2013.01); Y10T 428/24355 (2015.01);
Abstract

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cmat 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10.


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