The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

Aug. 05, 2015
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Yaqi Hu, Plano, TX (US);

Yanli Fan, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/018 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018507 (2013.01);
Abstract

Driving a back-gate of a transistor with a follower signal that corresponds to an information signal. At least some of the illustrative embodiments are methods including: passing an information signal from a drain terminal to a source terminal of a main field effect transistor (FET), the information signal has a peak-to-peak voltage; generating a follower signal that corresponds to the information signal, the follower signal electrically isolated from the information signal, and the follower signal has a peak-to-peak voltage lower than the peak-to-peak voltage of the information signal; and applying the follower signal to a back-gate of the main FET.


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