The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Jul. 15, 2016
Applicant:
Signalchip Innovations Private Limited, Bangalore, IN;
Inventors:
Himamshu Gopalakrishna Khasnis, Bengaluru, IN;
Anantha Melavarige Subraya, Shimoga, IN;
Naveen Mahadev, Bangalore, IN;
Assignee:
Other;
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/22 (2006.01); H03F 1/02 (2006.01); H03F 3/50 (2006.01);
U.S. Cl.
CPC ...
H03F 1/025 (2013.01); H03F 3/50 (2013.01); H03F 3/505 (2013.01); H03F 2200/453 (2013.01); H03F 2200/555 (2013.01); H03F 2200/69 (2013.01);
Abstract
Methods and circuits for maximizing gain of a voltage follower circuit are provided. The method includes using a NMOS voltage replica generation circuit, a PMOS voltage replica generation circuit, a NPN BJT voltage replica generation circuit, a n-channel JFET voltage replica generation circuit, a P-Channel JFET voltage replica generation circuit and a PNP BJT voltage replica generation circuit. The overall gain for the various transistor families is almost equal to unity.