The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2017
Filed:
Apr. 17, 2015
Seoul Viosys Co., Ltd., Ansan-si, KR;
Kwang Joong Kim, Ansan-si, KR;
Chang Suk Han, Ansan-si, KR;
Kyung Hee Ye, Ansan-si, KR;
Seung Kyu Choi, Ansan-si, KR;
Ki Bum Nam, Ansan-si, KR;
Nam Yoon Kim, Ansan-si, KR;
Kyung Hae Kim, Ansan-si, KR;
Ju Hyung Yoon, Ansan-si, KR;
Seoul Viosys Co., Ltd., Ansan-si, KR;
Abstract
Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.