The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2017

Filed:

Mar. 06, 2015
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Mohammed Tanvir Quddus, Chandler, AZ (US);

Mihir Mudholkar, Tempe, AZ (US);

Michael Thomason, Blackfoot, ID (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/095 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 29/36 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8725 (2013.01); H01L 29/36 (2013.01); H01L 29/66143 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01);
Abstract

In one embodiment, a trench Schottky rectifier includes a termination trench and active trenches provided in a semiconductor layer. The active trenches are configured to be at a shallower depth than the termination trench to provide a trench depth difference. The selected trench depth difference in combination with one or more of the dopant concentration of the semiconductor layer, the thickness of the semiconductor layer, active trench width to termination trench width, and/or dopant profile of the semiconductor layer provide a semiconductor device having improved performance characteristics.


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